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In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu–NiO) and vanadium-doped NiO (V–NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0–8 at%) and V (0–1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5–15 W. The effect of dopant concentration on optoelectronic behavior...