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A 250 V thin-layer SOI technology based on a 1.5-$\mu \text{m}$ -thick SOI layer is developed for high-voltage (HV) switching IC. HV thin-layer silicon on insulator (SOI) field p-channel LDMOS (pLDMOS) with thick gate oxide layer, SOI RESURF n-channel LDMOS (nLDMOS) with thin gate oxide layer, and low-voltage CMOS are monolithically integrated. Compared with the conventional SOI technology integrating...
Scan based transition delay fault (TDF) tests are generally applied in the launch-on-capture (LOC) mode because the scan enable control signal broadcast to all flip-flops on the die is expensive to implement as a fast switching signal needed to support at-speed launch-on-shift (LOS) tests. However, there is mounting evidence that even when applied at much slower speeds, LOS tests often detect a significant...
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