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In this work, we revealed the impacts of Vth shift on Ron in enhancement-/depletion-mode (E/D-mode) GaN transistors under dynamic AC (1 k-1 MHz) stress. With newly developed fast dynamic characterization techniques, we achieved data acquisition within 120 ns after each stress pulse throughout the entire stress time ranging from 10−7 s up to 103 s. Vth shift and the consequent Ron increase under dynamic...
A low on-resistance normally-off GaN double-channel metal–oxide–semiconductor high-electron-mobility transistor (DC-MOS-HEMT) is proposed and demonstrated in this letter, which features a 1.5-nm AlN insertion layer (ISL) located 6 nm below the conventional barrier/GaN interface, forming a second channel at the interface between the AlN-ISL and the underlying GaN. With gate recess terminated at the...
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