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For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt self-forming barrier (tCoSFB) [1]. Line-R vs. linewidth of Cu fine wires with TaN/Ru barrier crosses over with barrier-less Ru and Co wires for beyond-7 nm node dimensions, whereas Cu with tCoSFB remains competitive, with the lowest line R for 7 nm...
The current industry trends towards reducing feature size and increasing integration density call for the use of copper (Cu) metallization and low permittivity (low-k) interlayer dielectrics (ILD). Low-k dielectrics are typically characterized by low mechanical strength, low hardness and high porosity (Blaine et al., 2002). The thermal mismatch stresses induced by the manufacturing process pose significant...
Tungsten (W)-plug via failure in multi-level interconnects is one of the key reliability issues, due to electromigration and stress migration concerns. Electromigration (EM) failure of the interconnects is usually accelerated after thermal anneals due to stress voiding. In this study, we show that the electromigration lifetime of the via can significantly be improved after thermal anneal by the careful...
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