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We report an interface engineering approach to achieve a self-compliance controlled and forming-free switching in ReRAM devices based on MgO switching layers. The proposed devices showed scalability in self-compliance current with low set and reset voltages as the interfacial layer thickness was increased. The devices showed write endurance up to 1000 cycles under self-compliance controlled switching...
We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices...
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