The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Our understanding of the bias temperature instability (BTI) has been plagued by disagreements related to measurement issues. Although even in the early papers on BTI the existence of recovery was acknowledged and discussed, for unknown reasons this had little impact on the way we used to think about the phenomenon until recently. Even after the re-discovery of recovery, it took a few years until it...
Due to the ongoing reduction in device geometries, the statistical properties of a few defects can significantly alter and degrade the electrical behavior of nano-scale devices. These statistical alterations have commonly been studied in the form of random telegraph noise (RTN). Here we show that a switching trap model previously suggested for the recoverable component of the negative bias temperature...
The initial degradation during negative bias stress is often assumed to be due to hole trapping, while the generation of interface states may dominate at longer stress times. We conduct a thorough study of short-time negative bias temperature stress and relaxation using ultra-fast measurement techniques in the micro-seconds regime to clarify the physical mechanisms behind the responsible hole trapping...
Negative Bias Temperature Instability (NBTI) is frequently suspected to arise from a delicate interplay between some sort of hole trapping and an interface generation mechanism. In a recently suggested model the E' center along with its second form as an Si - Si dimer are supposed to play a key role. Despite of its successful application to a large amount of experimental data, this model relies on...
We extend the McPherson model in a manner to capture the effect of the whole surrounding lattice on the silicon-oxygen bond-breakage energetics. It is shown that the Mie-Gruneisen potential with the constants used in the original version of the model is not suitable under the consideration of the whole crystal. Other empirical pair-wise interatomic potentials, namely TTAM and BKS have been tested...
Recent publications on negative bias temperature instability have clearly demonstrated the existence of two components contributing to the phenomenon, with one of them recovering over many timescales and the other being more or less permanent. Interestingly, these two components seem to be coupled since their effect cannot be separated by the application of different stress voltages and stress temperatures...
We rigorously model charge trapping and detrapping in ultrathin dielectrics. In addition to charge exchange with the substrate, the poly-gate interface is taken into account which gives rise to decreased charge trapping compared to conventional models designed for thicker gate dielectrics. Finally, an extension of this model also accounting for the shift of trap levels may possibly explain the large...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.