The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Capture and emission of positive charge in individual defects has been studied using small area pMOSFETs. Analysis techniques similar to the ones used in RTS studies of nMOSFETs have been employed, with the difference that the capture process has been stimulated by stress pulses. We found that the recoverable part of the NBTI effect can be fully explained by capture and emission of these defects....
Negative bias temperature instability (NBTI) is a serious reliability issue for p-channel MOSFETs when stressed with negative gate voltages at high temperatures. There is not any analytical models of NBTI reported so far, which considers the dynamics of NBTI that are commonly observed in experimental data obtained from fast measurement techniques. An analytical model for NBTI is urgently required...
The initial degradation during negative bias stress is often assumed to be due to hole trapping, while the generation of interface states may dominate at longer stress times. We conduct a thorough study of short-time negative bias temperature stress and relaxation using ultra-fast measurement techniques in the micro-seconds regime to clarify the physical mechanisms behind the responsible hole trapping...
The McPherson model for the Si-O bond-breakage has been extended in a manner to capture the effect of O-Si-O angle variations on the breakage rate. Using a distribution function of the O-Si-O bond angle, a series of breakage rate probability densities has been calculated as a function of the applied electric field. Using such a distribution function we have calculated the mean vale and the standard...
We extend the McPherson model in a manner to capture the effect of the whole surrounding lattice on the silicon-oxygen bond-breakage energetics. It is shown that the Mie-Gruneisen potential with the constants used in the original version of the model is not suitable under the consideration of the whole crystal. Other empirical pair-wise interatomic potentials, namely TTAM and BKS have been tested...
Recent publications on negative bias temperature instability have clearly demonstrated the existence of two components contributing to the phenomenon, with one of them recovering over many timescales and the other being more or less permanent. Interestingly, these two components seem to be coupled since their effect cannot be separated by the application of different stress voltages and stress temperatures...
?? NBTI measured for non-nitrided oxides ?? for wide range of stress field (3...8MV/cm) ?? for wide range of oxide thickness (7nm.....50nm) ?? and compared to thin nitrided oxide ?? Less NBTI drift in thick oxides, but same fraction of recovery and same stress field dependence ?? For fast measurement perfect power law behavior for all thicknesses / all fields ?? ?? "safest" way of assessment...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.