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Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840°C and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confirms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the field of internal elastic stresses.
The results of experimental researches, methods of prediction and increase of radiation resistance of logic CMOS integrated microcircuits, MOS memory microcircuits ?? electrically erasable programmable read only memories (EEPROM), and also insulated gate bipolar transistors (IGBT) are presented.
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