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Following the recent development of Single Atom Transistors [1,2], we realized the first Coupled Atom Transistor in a small silicon nanowire MOSFET. Three independent gates control two donors connected in series between the source and the drain in a small volume of silicon. The devices, either implanted with Phosphorus (1024m−3) or Arsenic atoms, are fabricated with SOI technology on 200 and 300 mm...
We access properties of single dopants embedded in ultra-scaled MOSFET. In such nanostructures, the ionization energy of a single dopant is enhanced. We establish a new method to determine the energy spectrum of a single dopant by connecting two dopants in series and using one dopant as an energy probe for the second one. Gigahertz microwave driving of this double donor system reveals coherent charge...
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