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Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5 nm conformal shallow junctions at low energy with no structure damage for both silicon (Si) and germanium (Ge). N-type PH3 plasma-assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma-assisted doping at high wafer temperature showed...
Advanced inductively coupled plasma techniques and surface treatments have been used to demonstrate 5 nm conformal shallow junctions at low energy with no silicon structure damage. N-type PH3 plasma-assisted doping was characterized by dopant diffusion and electrical activation with increasing wafer temperature. Plasma-assisted doping at high wafer temperature showed no structure damage even at a...
In this letter, we investigate the electrical behavior of vacancy defects in Ge at various thermal annealing conditions through electrochemical capacitance–voltage analysis. Then, the effects of the annealing process on Ge junction diodes were also studied with , transmission electron microscopy, and secondary ion mass spectroscopy measurements in the aspects...
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