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In this paper, tunnel FETs (TFET) with different gate dielectrics are studied. The effects of gate dielectric constant in the TFET are investigated with qualitative analysis and numerical simulations. The regulation of gate-channel coupling and the modulation of electric field at the tunnel junction both contribute to the carrier tunneling in TFETs. The dominant one is determined by the topology of...
The Effect of silicon window polarity on partial-SOI (partial silicon-on-insulator, PSOI) LDMOS power devices under high-voltage operation is studied. Different polarities of the silicon window in PSOI LDMOSFETs are analyzed to investigate their effects on electrical characteristics: breakdown voltage (BV) and on-resistance (Ron). In partial-SOI LDMOSFETs, the P-type silicon window is considered as...
The stacked ground planes with vias stitching is employed to suppress the ground-bounce induced electromagnetic emission in multilayer printed circuit boards. This paper developed an analytic normal-mode analysis and used it to design the optimized positions of the vias in the board periphery. Comparison with full-wave simulation validates that the proposed systematic design procedure can easily achieve...
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