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Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium (TEMAH) and water vapour as precursors in a modified Oxford Instruments PECVD system. Self-limiting monolayer growth has been verified, characterised by a growth rate of 0.082 nm/cycle. Layer uniformity is approximately within ±1% of the mean...
This paper describes the deposition of microcrystalline silicon carbide in an LRP reactor using silane/propane gas chemistry and discusses the performance of heterojunction bipolar transistors using N-SiC emitters.
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