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The forward characteristics of MPS diodes is composed of two branches: the first one is determined by unipolar conductivity originating from the Schottky contact, while the second one arises from hole injection by the Ohmic contact. A high ratio Ws/Wo of the Schottky contact area Ws to the Ohmic contact area Wo results in high unipolar conductivity and, thus, less heat dissipation under normal operation...
There is a trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes. This paper explains the physical mechanisms underlying this trade-off and identifies the relevant design parameters. The dependencies of this trade-off on the layout parameters and physical parameters are described by analytical relations (compact model). An equivalent lumped element...
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