The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An 88% reduction of refresh power of the 65 nm embedded DRAM is achieved using super retention mode (SRM) with word line data mirroring (WLDM). The retention time in super retention mode is measured in the range of 0.55 V to 1.2 V. The minimum refresh power is obtained at 0.6 V. The retention time of super retention mode at 0.6 V is extended by 4.1 times from that of conventional single cell operation...
Embedded DRAMs have superior features for applications that require very high memory bandwidth, such as graphics and multimedia. To achieve high memory bandwidth, various techniques such as widening input/output pins shrinking the unit array size, and performing a read operation and a write operation concurrently have been reported. However, these embedded DRAM macros incur considerable area penalty...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.