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The minimum operating voltage, Vmin, of memory-rich nanoscale CMOS LSIs is investigated to open the door to the below 0.5-V era. A new method using a timing margin is proposed to evaluate Vmin. It shows that Vmin is very sensitive to the threshold-voltage variations, ΔVt, which become more significant with device scaling, and to the lowest necessary threshold voltage, Vt0, of MOSFETs. As a result...
The Vmins of logic, SRAM, and DRAM blocks were compared with a newly proposed methodology for evaluating Vmin based on speed variations, taking repair techniques into account. State-of-the-art 6T SRAM cells were then discussed in terms of Vmin and cell size. After that, many adaptive circuits and relevant technologies needed to break the 1V wall were proposed and evaluated, while taking the interconnect...
A sensing scheme with temporary activation of a low-V, gated preamplifier (LGA) achieves fast sensing, fast local I/O driving and low-leakage operation simultaneously even for low-voltage mid-point sensing. The features are verified with a 70 nm 128 Mb DRAM core that demonstrates 16.4 ns row access (tRCD) and 14.3 ns read access (tM) at an array voltage of 0.9 V. The LGA is promising for future sub-1...
The minimum operating voltage (Vmin) of nano-scale LSIs is investigated, focusing on logic gates, SRAM cells, and DRAM sense amplifiers in LSIs. The Vmin that is governed by SRAM cells rapidly increases as devices are miniaturized due to the ever-larger variation of the threshold voltage (VT) of MOSFETs. The Vmin, however, is reduced to the sub-one-volt region by using repair techniques and new MOSFETs...
The minimum operating voltage (Vmin) of nano-scale LSIs is investigated, focusing on logic gates, SRAM cells, and DRAM sense amplifiers in LSIs. The Vmin that is governed by SRAM cells rapidly increases as devices are miniaturized due to the ever-larger variation of the threshold voltage (VT) of MOSFETs. The Vmin, however, is reduced to the sub-one-volt region by using repair techniques and new MOSFETs...
The minimum operating voltage (Vmin) of nano-scale LSIs is investigated, focusing on logic gates, SRAM cells, and DRAM sense amplifiers in LSIs. The Vmin that is governed by SRAM cells rapidly increases as devices are miniaturized due to the ever-larger variation of the threshold voltage (VT) of MOSFETs. The Vmin, however, is reduced to the sub-one-volt region by using repair techniques and new MOSFETs...
A high-speed, small-area DRAM sense amplifier with a threshold-voltage (VT) mismatch compensation function is proposed. This sense amplifier features a unique hierarchy data-line architecture with a direct sensing scheme which uses only nMOS transistors in the array, and a simple VT mismatch compensation circuitry which uses a pair of nMOS switching transistors. The layout area of the sense amplifier...
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