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This work investigates device performances of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor (MOS-pHEMT) by using ozone water oxidation treatment. Experiment results indicate that the studied MOS-pHEMT has demonstrated superior device characteristics as compared to a conventional pHEMT without oxidation treatment on the same epitaxial structure. The studied...
Electrolessly plated over pad metallization (OPM) was evaluated for high temperature gold wire bonding applications. Bonding strength, measured by wire bond bump shear test, of 4N gold wire on electroless OPMs, such as electroless nickel/immersion gold (ENIG), electroless nickel/electroless palladium (ENEP), and electroless nickel/electroless palladium/immersion gold (ENEPIG), was carefully evaluated...
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