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As the most important reliability issue for the modern CMOS industry, p-MOSFET negative bias temperature instability (NBTI) is so serious now that limits the device lifetime. This paper addresses the characteristics of one of the oxide defects that responsible for NBTI, the as-grown hole trapping (AHT). It is found that AHT dominates NBTI at the beginning of stress, but its contribution decreases...
The NBTI recovery induced by conventional measurements and its physical origin are studied. It is demonstrated that, with carefully designed experiments using conventional slow equipments, the measurement induced recovery can be evaluated and investigated. It is re-affirmed that the measurement induced recovery is primarily due to the discharge of bulk traps in ultra-thin SiON. The passivation of...
The permanent component of NBTI stress induced degradation in pMOSFETs with oxynitride gate dielectrics has been studied experimentally. It is observed that the magnitude of permanent degradation component is determined by the equivalent stress time under a given set of stress conditions, regardless of stress gate voltage interruptions. The permanent component follows a power-law time dependence with...
The impact of stress and recovery condition on the recovery of an ultrathin oxynitride p-MOSFET under negative-bias temperature instability (NBTI) stress was investigated in this paper. The positive SiO2 bulk trap detrapping and the relaxation of Si/SiO2 interface state was studied through the single point Idlin (drain current) and NFBSILC (near flat-band stress induced leakage current) measurement...
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