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This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (Vth) are 800 mA/mm and +3 V, respectively. These...
In summary, we dem onstrated AlGaN/GaN enhancement-mode MIS-HEMTs that exhibited a high maximum drain current of 860 mA/mm and high off-state breakdown voltage of 320 V with threshold voltage of 3 V by introducing a piezoelectric-induced cap and a recessed ALD-MIS-gate structure. This is the highest Lja??with the breakdown voltage of over 300 V for enhancement -mode HEMTs. The 1 mm gate width device...
Novel n-GaN/n-AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with Si3N4 film were fabricated on a semi-insulating (S.I.) SiC substrate. An n-GaN/n-AlGaN/GaN MIS-HEMT with a breakdown voltage of 400 V was obtained by using SiN/n-GaN cap structure. The single-chip GaN MIS-HEMT amplifier operated at 60 V achieves a high output power of 110 W with a linear gain...
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