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A cadmium sulfide (CdS) passivation process was demonstrated for the first time on InGaAs/InP p-i-n mesa photodetectors. The passivated devices produced lower reverse bias leakage currents in comparison to devices that received only a thermally deposited SiO2 film. The subsequent deposition of SiO2 on the passivated devices produced virtually no change to the aforementioned leakage currents even after...