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Epitaxially grown single crystalline PbTe-films on BaF2 are subjected to a considerable strain due to the mis-match of the lattice constants and the thermal expansion coefficients. By magnetooptical and X-ray experiments it was possible to investigate separately the contributions of the compressive misfit strain and the thermally induced tensile strain. As a consequence of the opposite direction of...
Epitaxial layers of n-PbTe with mobilities up to 4×106 cm2/Vs at 4 K were grown by the hot-wall technique. The experimental data can be explained in terms of ionized-defect scattering, usina a potential consisting of a Coulomb part and a short-range part, together with the correct low-temperature value for the static dielectric constant (ε = 1300).
Several groups of narrow gap semiconductors have become particularly interesting in the fields of pure science and technology. Among these are some of the mercury, cadmium and lead compounds and some of the semimagnetic semiconductors. We report on the crystal growth of these materials and on the latest developments to meet the requirements of basic research and technology.
CdTe thin films grown by ion-assisted doping are investigated for use as the absorber layer in solar cells. In particular, the sharp reduction in carrier density with increased ion current which occurs after a maximum in the carrier density has been reached is examined. The ability to make carrier density profiles and to grade junctions is demonstrated. Preliminary results from films grown on graphite...
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