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A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
This paper presents modeling nanometer MOSFETs by a neural network approach. The principle of this approach is firstly introduced and its application in modeling DC and conductance characteristics of nano-MOSFET is demonstrated in details. It is shown that this approach does not need parameter extraction routine while its prediction of the transistor performance has a small relative error within 1%...
A new data-dependent zero-memory preprocessing algorithm is proposed to mitigate additive heavy-tail noise and/or shot noise. Each sensor-array snapshot's spatial data vector is adaptively normalized by its infinity-norm. Zero cross-correlation is preserved between the signal-subspace and the noise-space.
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