The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Ga(NAsP) multi quantum well heterostructures were grown pseudomorphically on exactly oriented (001) silicon substrates without the formation of misfit dislocations. Optical pumped lasing operation was observed at temperatures up to 125 K.
We report lasing of optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures grown lattice-matched on Si. Modal gain of up to 80 cm-1 is determined at 300 K and a distinct threshold behaviour and mode spectrum is observed up to 100 K.
We report on the lasing dynamics of semiconductor disk lasers following well and barrier pumping with both 500 ns and 5 mus pulses. The dynamics are explained using rate- equations.
We investigate time-resolved photoluminescence in Ga(NAs)/GaAs. We find that energy relaxation of optically excited carriers from the conduction band into nitrogen-related cluster states depends on temperature, excitation density, and effective nitrogen concentration after hydrogenation.
Transient gain measurements are performed for (Galn)As quantum well structures. Gain up to 2000 cm-1 on a timescale of several hundred ps is observed. A microscopic model quantitatively provides theoretical support without introducing fit parameters.
We report lasing of optically pumped Ga(AsNP)/GaP multiple quantum-well structures grown pseudomorphically on GaP substrate. A distinct threshold behaviour is observed at both cryogenic and room temperature; modal gain of up to 20 cm-1 is determined.
Summary form only given. In a coherent control four-wave mixing (FWM) experiment, a first pulse, 1, can excite a certain electron-hole pair density n/sub eh/ in a semiconductor. Because this density is connected with interband coherence, a second phase locked and time-delayed pulse, 1', adjusted for destructive interference, can lead to a coherent reemission of photons. As a result, a first light...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.