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Electrical properties and reliability of bilayer HfO2 (∼7nm)/Al2O3 (∼3nm) high-k dielectric films prepared by RF sputtering have been studied in detail. It is observed that the bilayer dielectric reduces the frequency dispersion, hysteresis, interface trap charge density (Dit) and gate leakage current density when compared to single layer HfO2. In order to study the degradation mechanisms in Al/HfO...
This paper deals with the leakage current variation occurring in Al/HfYOx/GaAs capacitors subjected to constant electrical stress. It is shown that the current-time characteristic of such structures follows a power-law logistic model that arises from an extension of the Curie-von Schweidler law. The proposed model is based on an equivalent electrical circuit representation of the degraded structure...
The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide...
Advanced metal-insulator-metal (MIM) capacitors with ultra-thin (EOT~2.1-4.9 nm) RF sputter-deposited HfAlOx dielectric layers having excellent electrical properties have been fabricated. The capacitance density is found to increase with the decrease in thickness of insulator film. MIM capacitors show little voltage and frequency dependence along with low dissipation and leakage current. Our experimental...
Electrical and reliability characteristic of Hf-based GaAs metal-oxide-semiconductor (MOS) capacitors (TaN/HfO2/HfOxNy/p-GaAs) with ultrathin HfOxNy interfacial layer is investigated. Charge trapping behavior has been studied under both the DC and dynamic voltage stressing. Transient response and the degradation mechanism of the dielectric have been studied both under positive and negative DC gate...
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