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Reliability characteristics of ZrO2 gate dielectric films on p-GaAs with ultrathin silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered ZrO2 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been...
Ultra thin (~6-7 nm) silicon-oxynitride films have been deposited on Strained-Si/Si0.8Ge0.2 layers at high temperature of 900degC and 1000degC using rapid thermal nitridation in O2+N2 ambient. The border trap (Qbt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed...
Electrical and reliability characteristic of Hf-based GaAs metal-oxide-semiconductor (MOS) capacitors (TaN/HfO2/HfOxNy/p-GaAs) with ultrathin HfOxNy interfacial layer is investigated. Charge trapping behavior has been studied under both the DC and dynamic voltage stressing. Transient response and the degradation mechanism of the dielectric have been studied both under positive and negative DC gate...
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