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The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (Ioff) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff)...
The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while still achieving an extremely low off-state leakage (Ioff) at ∼10−21A (zA) level. Attributed to DOSRAM performance improvement, 100MHz normally-off (Noff)...
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