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This paper reports for the first time a power amplifier (PA) based on the recently proposed MASMOS® transistor. This PA complies with the long-term evolution (LTE) power level requirements while offering a high efficiency. The MASMOS® transistor, available in low-cost 180-nm standard CMOS process, provides a higher breakdown voltage compared to conventional CMOS transistors. Therefore, the MASMOS®...
This paper reports for the first time a power amplifier (PA) based on the recently proposed MASMOS® transistor. This PA complies with the long-term evolution (LTE) power level requirements while offering a high efficiency. The MASMOS® transistor, available in low-cost 180-nm standard CMOS process, provides a higher breakdown voltage compared to conventional CMOS transistors. Therefore, the MASMOS®...
This paper reports on the first experimental characterizations and modeling process of a MASMOS® transistor with a classical model, largely used for the modeling of other transistors. From DC IV and S-parameters measurements a large signal model (LSM) has been carried out. The great interest of this model is to allow a simulation time reduced by a factor of 100 compared to foundry model, like BSIM3...
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