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An interleaved multi-phase converter with coupled inductor can achieve high power density and high efficiency, and is an effective approach for high power applications. However, a number of phases also results in the fact that component counts are increased. In this paper, the downsizing performances when the number of phase change in a multi-phase DC-DC converter with 2-phase coupled inductor cell...
SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high...
Wide band gap power semiconductor devices are now replacing the Si-MOSFET or IGBT. GaN-HEMT achieves the reduction in size and weight, thanks to its high frequency switching behavior. However, its high-speed switching characteristics and low threshold voltage may cause a false turn-on phenomenon, which is a fatal effect for the applications. It is urgent issue to tackle and avoid this problem by modifying...
Interleaved Multi-phase DC/DC Converters (IMDDC) with Integrated Magnetic Components (IMC) are well-known as one of the converter topologies that can achieve high-power-density. However, as one of the drawbacks of IMDDCs, the power conversion efficiency when all phases are driven may decrease between light and middle loads. The main causes of the efficiency reduction are non-load losses caused by...
Electric Vehicles demand high efficiency power converter in their powertrains in order to use the energy of the storage unit in a better way. Specifically, the power converters, that interface the storage unit with the motors, are usually composed of high-losses components. Moreover, the topologies used in these systems present conditions of hard switching and reverse recovery phenomena that reduce...
In this paper, an analytical expression for the DC bus harmonics on the input capacitor, caused by a three phase pulse width modulation (PWM) inverter of a high speed motor drive system, is derived. As the result, we found that the parasitic line inductance between the battery and the input capacitor, and the input capacitor are indirectly proportional. We can achieve the calculation method of the...
Communication relay stations often suffer from common-mode noise generated by high speed switching in a boost chopper equipped for power supply. This problem can be addressed by applying soft-switching techniques to the boost chopper, although this can lead to significant increase in the circuit volume. To address this difficulty, this paper proposes a novel passive regenerative turn-off snubber applicable...
The demand of high power Continuous Conduction Mode (CCM) Power Factor Correction (PFC) converter installed in charging devices for Electric and Hybrid Vehicles has grown in the recent years. In these converters, the inductor often appears as the largest component, consequently, the CCM boost PFC converter using coupled inductors is well-known as one of the topologies that can achieve miniaturization...
This paper proposes a novel non-isolated high step-up converter suitable for miniaturization by high frequency design. High step-up converters with voltage multipliers are promising for high frequency design because many of them can be free from coupled inductors or transformers, which may lower the voltage gain due to the leakage inductance or may cause significant AC conduction loss in the primary...
New semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are very attractive for improving converter efficiency and power density in power electronics. Especially, GaN FETs are promising devices for the high speed switching and good cost performance due to being able to use silicon wafer, so that we focus on GaN FETs. There are two types of GaN FETs, and one, non-isolated...
In recent years, an energy issue is becoming serious or severe. Therefore, power electronics technology is one of the key technologies since this technology can deal with electric energy efficiently, and some company tries to introduce this technology. Our company offers the opportunity to study this technology such as a circuit topology, designs of inductor or transformer with practical experiments...
Point of load (POL) converters are required smaller size and high efficiency performance in IT industrial applications, etc. Interleaved technique, magnetic integration techniques and application of GaNFETs are well known as good approaches to satisfy these demands. Although coupled inductors for POL converters have been proposed in several studies, a coupled multilayer chip inductor has not examined...
The interleaved boost converter with coupled inductors which achieves high power density has gained great attention in automotive applications. However, the temperature of the inductor tends to be high because loss density is increased by the high power density. Therefore, it is important to calculate the inductor losses when the inductors in high power density converters are designed. In this paper,...
In this paper, the novel gate drive circuit with a positive supply is proposed. This gate drive circuit realizes the switching drive with a positive supply. Hence, a negative supply isn't required to drive depression-type GaN FETs. And also, the high speed switching is achieved, the rise time is 9.6ns and fall time is 28.0ns respectively. Furthermore, the validity of the gate drive circuit is verified...
Higher efficiency performances, lower EMI/RFI noise, and low cost boost converter have been required in power conversion system for Electric Vehicle, Plug-in Hybrid Electric Vehicle. Recovery-less boost converter are satisfied all those demands, without active power switch. So far, recovery-less boost converter are proposed two method; with the auxiliary inductor type or the saturable inductor type...
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