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The U.S. Army Research Laboratory (ARL) and Wolfspeed developed silicon carbide (SiC) vertical MOSFETs for linear-mode operation. The motivation is to determine whether SiC's material properties enable SiC MOSFETs to withstand higher pulse-current density and energy dissipation than is achievable with commercial silicon linear-mode MOSFETs. The SiC device is a 3.3 mm × 3.3 mm chip with a thick gate...
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