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High demand exists for low operating energy optical links that use wavelength division multiplexing technologies in datacenter networks. Thus, we fabricate a directly modulated membrane distributed-reflector laser with low operating energy on a thermally oxidized silicon (Si) substrate. Because we use epitaxial growth to bury an active region on a directly bonded InP-based membrane, it needs to be...
We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).
We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs...
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