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We have succeeded in forming a Ga-Sn-O (GTO) film for a thin-film transistor (TFT) using radio-frequency (RF) magnetron sputtering at room temperature without annealing process. The field-effect mobility is 0.48 cm2·V−1·s−1 and the threshold voltage is 2.22 V. This result suggests a possibility of rare-metal free amorphous metal-oxide semiconductors.
We have evaluated characteristics of Ga-Sn-O (GTO) thin films deposited by RF magnetron sputtering with changing composition ratios of sputtering targets and deposition pressure. The optical transmittance is more than 80%, and the sheet resistance decreases as the deposition pressure increase for the thin films for Ga∶Sn=1∶3, On the other hand, for the thin films for Ga∶Sn=3∶1, both the transmittance...
Transparent In2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using In2O3 powder target. The transmittance of the In2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the In2O3 thin film would be applicable for the...
Rare metal free SnO2 / Al2O3 thin film semiconductor was evaluated for applications of thin film transistor (TFT) active channel layer. The film was deposited with RF magnetron sputtering using mixed SnO2 / Al2O3 powder target. The transmittance of the SnO2 / Al2O3 film was higher than 80 %. The sheet resistance of the film could be controlled by the deposition condition. Therefore, the SnO2 / Al2...
The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2...
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