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We confirmed that photo-induced current in off region changes when we irradiate infrared light to N-type, P-type and PIN-type low-temperature poly-Si TFTs. In addition, we found that the photo-induced current is proportional to the gate width, whereas it does not depend on the gate length. We can indicate that it is possible to detect infrared light above certain intensity from the relationship between...
We have evaluated light and temperature dependences of transistor characteristics in n-type, p-type and pin-type poly-Si TFTs with and without infrared (IR) light illumination. It is found that light and temperature dependences of the off-leakage currents in the n-type and p-type TFTs are much larger than those of the on currents. Moreover, we confirmed that the light dependences with IR light illumination...
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