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We show coherent wireless transmission at carrier frequencies of 0.25 THz and 0.35 THz, relying exclusively on optoelectronic concepts for RF signal generation and coherent reception. In a proof-of-concept experiment, we demonstrate transmission of a BPSK signal at a symbol rate of 1 GBd.
We show coherent wireless transmission at carrier frequencies within 0.30+0.02 THz using up to 20 QPSK-modulated subcarriers with a symbol rate of 0.75 GBd each, leading to an aggregate line rate of 30 Gbit/s. We exploit optoelectronic techniques, both for THz generation and coherent reception.
Silicon-plasmonic photodetection based on internal photoemission exploits the intrinsic absorption in plasmonic waveguides at metal-dielectric interfaces. For this purpose we designed an asymmetric metal-semiconductor-metal waveguide with a width of 75 nm. Our plasmonic internal photoemission detector (PIPED) shows a rec-ord-high photocurrent sensitivity of up to S = 0.12 A / W for light at a wavelength...
We demonstrate the first silicon-plasmonic photomixer. THz radiation is generated and received by employing two lasers near 1.5 μm. The receiver sensitivity of 28 mA/(W V) compares well with the sensitivity of a commercial system.
An overview of high-speed plasmonic-organic hybrid (POH) modulators for BPSK and OOK signaling is presented. The optimum length of POH modulators resulting in maximum optical modulation amplitudes (OMA) are discussed.
Limitations of silicon photonics can be overcome by hybrid integration or by photonic multi-chip systems. We give an overview on recent progress regarding silicon-organic hybrid (SOH) integration as well as multi-chip integration enabled by photonic wire bonding.
We report on plasmonic-organic hybrid(POH) phase modulator generating error free (BER<10−10) BPSK signals at 40Gbit/s. In addition, generation and direct detection of 40Gbit/s OOK signals are discussed using POH Mach-Zehnder modulators on the transmitter side.
We demonstrate first plasmonic photodetectors based on internal photoemission featuring responsivities exceeding 0.12 A/W at 1550 nm. The devices consist of ultra-compact plasmonic waveguides with electrode spacing below 100 nm receiving on-off-keying signals at 40 Gbit s−1.
Silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration combines organic electro-optic materials with silicon photonic and plasmonic waveguides. The concept enables fast and power-efficient modulators that support advanced modulation formats such as QPSK and 16QAM.
Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration by enabling fabless fabrication and joint processing of photonic and electronic circuitry. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, thereby reducing the device footprint by more than an order of magnitude...
In this paper, the chip-to-chip interconnection architecture adopted by the EU-project NAVOLCHI are discussed. The plasmonic physical layer consisting of a plasmonic nanoscale laser, a modulator, an amplifier and a detector is introduced. Current statuses of the plasmonic devices are reviewed.
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