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0.1 μm soft gold film substrate was ultrasonic bonded with 0.6 mil gold wire, which effectively reduced gold assumption comparing to the traditional 0.3∼0.5 μm soft gold film substrate. The substrate showed good bondability by wire pull test (WPT) and perfect reliability by high temperature storage test (HTST). The bonding structure in failure mode of wire pull test was studied by focused ion beam...
The electrical and physical properties of PrxAl2−xO3 on metal-oxide-semiconductor gate dielectric were investigated. Amorphous PrxAl2−xO3 films with the thickness of 15 nm were deposited by electron-beam evaporation under a typical dielectric constant and equivalent oxide thickness of 18 and 3.3 nm, respectively. Leakage current decreased from 48mA/cm2 to 3.4mA/cm2 at a gate voltage of 1V after 500...
A simple electroless deposition method of fabricating silver nanosheets which is a promising replacement for a high-temperature lead-rich solder used for electronics has been reported. This substrate free deposition method can solve the surface coating problem of the nanostructured silver. By controlling the deposition time, the silver nanosheets with a length of 2μm and a width ranging from 10nm...
In this paper, electroless-NiB film was deposited on insulator/Si activated with PdCl2 as the barrier layer to prevent the diffusion of Cu into Si. This was done without any conventional pretreatment as modified by self-assembled monolayer (SAM). The results show that the NiB layer is highly uniform and the defects of the NiB layer is decreases with the increasing deposition time. After annealed at...
In this paper, electroless-NiB film was deposited on insulator/Si activated with PdCl2 as the barrier layer to prevent the diffusion of Cu into Si. This was done without any conventional pretreatment as modified by self-assembled monolayer (SAM). The results show that the NiB layer is highly uniform and the defects of the NiB layer is decreases with the increasing deposition time. After annealed at...
A simple electroless deposition method of fabricating silver nanosheets which is a promising replacement for a high-temperature lead-rich solder used for electronics has been reported. This substrate free deposition method can solve the surface coating problem of the nanostructured silver. By controlling the deposition time, the silver nanosheets with a length of 2μm and a width ranging from 10nm...
0.1 μm soft gold film substrate was ultrasonic bonded with 0.6 mil gold wire, which effectively reduced gold assumption comparing to the traditional 0.3∼0.5 μm soft gold film substrate. The substrate showed good bondability by wire pull test (WPT) and perfect reliability by high temperature storage test (HTST). The bonding structure in failure mode of wire pull test was studied by focused ion beam...
The electrical and physical properties of PrxAl2−xO3 on metal-oxide-semiconductor gate dielectric were investigated. Amorphous PrxAl2−xO3 films with the thickness of 15 nm were deposited by electron-beam evaporation under a typical dielectric constant and equivalent oxide thickness of 18 and 3.3 nm, respectively. Leakage current decreased from 48mA/cm2 to 3.4mA/cm2 at a gate voltage of 1V after 500...
Through silicon via (TSV) with many advantages comparing with traditional technology is playing an important role in three-dimensional large-scale integration. In this paper, we have studied Effect of leveler on microstructure and stress of electroplated copper for TSV application. We demonstrate residual stress, SEM, TEM and electrochemistry results which have strong connection with leveler in via...
In this paper, the formation and growth of intermetallic compounds (IMCs) of Sn-8Zn-3Bi-0.3Cr solder on Cu, Ni and Ni-W substrates have been investigated. For the Cu substrate, only Cu5Zn8 intermetallic compound was observed. For the Ni substrate, a Ni5Zn21 film formed at the interface due to the fast reaction between Ni and Zn. For the Ni-W substrate, a thin Ni5Zn21 film appeared between the solder...
Ni/Au microcones were fabricated and thermosonic bonded with Au wire. The thickness of Au film was only 0.05μm. The substrate with Ni/Au microcones showed good Au wire bondability with the average pull strength 4.85 gf and ball shear strength 54.33 gf. Microscopi observation showed that Ni/Au microcones were inserted into Au wire, thus physical interlock between the substrate and Au wire was formed...
Levelers have great influence on residual stress of electrodeposited film used in TSV. In this study, 2-MP (2-mercaptopyridine), JGB (Janus green B) and 2-ABT (2-aminobenzothiazole) are used as levelers to study the effects of different levelers on residual stress. The film stress deposited with different levelers decreases in the order of 2-MP, JGB and 2-ABT and closely related to grain size. Grain...
An intelligent surface with Ni micro-nano cones array (MCA) was fabricated with electro-deposition method and exhibited super-hydrophilic nature when freshly prepared. Spontaneous transition from super-hydrophilicity to super-hydrophobicity was observed when the surface was exposed in air at room temperature. The special surface structure of MCA played an important role in amplifying the surface wettability...
Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of via is substantially higher. The correlation of stress and texture evolution during self-annealing of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray diffraction...
Co-Ni films are widely used in electronics industry for their excellent magnetic, mechanical and electrical properties. In this work, the influence of substrate type and deposition parameters on the morphologies of electroplating Co-Ni nanostructures was investigated. It was found that scallop shell-like Co-Ni depositions could be fabricated on copper wafers. The tendency to form the scallop shell-like...
Electroless Sn films have great potential in the lead-free age such as for high-density, fine-pitch, narrow soldering pad and bump interconnection applications. In the present work, electroless Sn were deposited onto lead-frame alloys (C194 and FeNi42). The microstructures of the electroless Sn films and tin whisker growth in thermal / humiditive chamber were investigated with scanning electron microscope...
Through silicon via (TSV) is a high performance technique to create 3D packages and 3Dintegrated circuits, compared to alternatives such as package-on-package, because the density of the via is substantially higher. The effect of current density and bath's organic additives on internal stress of copper electrodeposited from TSV filling methanesulfonate bath has been studied by Surface Profiler, X-ray...
Superhydrophobic nickel films were prepared by electrodeposition and electroless deposition without chemical modification. Experimental results reveal that the nickel film fabricated by electrodeposition is characterized with nanocone arrays and only has a contact angle of about 112°. By coupling electroless deposition, as the second step, hemispherically topped nanocones are generated and a high...
In this study, we used electroless deposition of NiP, NiWP on p-type Si as the barrier layer to prevent the diffusion of Cu into Si. We added different amount of W into the layer, wt% is 11.89% (NiWP-1) and 25.36% (NiWP-2). After annealed at various temperatures, thermal stability of the Si/Ni(W)P/Cu layers were evaluated by measuring the changes of resistance of the samples, using four-point probe...
Copper metallization on LCP was carried out by means of electroless plating followed by electroplating and the effect of pretreatment on the adhesive strength of the Cu-plated LCP was investigated in detail. Compared with the other etching agents used here, potassium permanganate was found to be the most effective and the optimum etching time is 20min. With potassium permanganate as the etching agent,...
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