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A broadband silicon mid-infrared optical parametric amplifier operating near λ=2200nm, exhibiting maximum gain >;25dB, and net off-chip gain >;13dB, is presented. Broadband cascaded four-wave-mixing spanning a 500nm spectrum is facilitated by large on-chip gain.
Power delivery system noise, current and impedance are the key performance factors for successful chipsets/CPUs design. Power delivery noise is significantly affected by on-die impedance and current, i.e., on-die power grid equivalent resistance (Rdie), capacitance (Cdie), and Icc(t). Rdie and Cdie have been challenging in pre-silicon extraction and post-silicon measurement. This paper focuses on...
We discuss measurement of the nonlinear-optical properties of Si-wire waveguides and the design of these wires for use in on-chip waveguide applications.
We present the first full theoretical and numerical analysis of the influence of the waveguide geometry and intrinsic material frequency dispersion of the nonlinearity, on the Si wires effective third-order nonlinearity and its frequency dispersion.
We present the first experimental demonstration of error-free (bit error rates < 10-12) transmission of a 300-Gbps WDM data stream through a 2-cm-long silicon photonic wire using 24 C-band channels, each modulated at 12.5 Gbps.
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