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In this paper, it is reported for the first time that, in nanoscale high-k/metal-gate MOSFETs, the hot carrier degradation (HCD) follows a two-stage law in some stress conditions. Both interface traps and oxide traps contribute to HCD causing its time-dependence varies with different stress modes. The results are helpful for the physical understanding of HCD in nanoscale devices.
The frequency dependence of oxide trap coupling effect in nanoscale MOSFETs under AC switching condition is discussed thoroughly, with experimental and theoretical studies. By using AC STR measurement, a decreased tendency of trap coupling strength with increased frequency is observed. Rather than conventional 2-state trap model, it is found that only the explanation based on complete 4-state trap...
The coupling effect between multi-traps in complex RTN is experimentally studied in scaled high-κ/metal-gate MOSFETs for the first time. By using extended STR method, the narrow “test window” of complex RTN is successfully expanded to full VG swing. Evident defect coupling can be observed in both RTN amplitude and time constants. Interesting nonmonotonic bias-dependence of defect coupling is found,...
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