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This work reports the design of a monolithic oscillator based on a low motional impedance (Rm) CMOS-MEMS resonator array with a high-stiffness driving scheme in a standard 0.35 µm CMOS. Combined with the previously developed polysilicon release process and the proposed “contact-array-assisted” transducer design, a tiny equivalent transducer's gap (deff) of only 190 nm is successfully attained. Based...
This paper reports on the recent progress of the high-Q integrated micromechanical resonator, oscillator, and filter using the “CMOS-MEMS technology” to enable monolithic integration of MEMS and IC. The paper scope covers three major parts, including (i) the fabrication technologies of the CMOS-MEMS resonators and their associated circuitry; (ii) the performance enhancement of the resonators on motional...
This paper reports on recent progress on high-Q integrated micromechanical resonators using “CMOS-MEMS technology” to enable monolithic integration of MEMS and CMOS. Specifically, we take advantage of IC and semiconductor strength in Taiwan to develop several CMOS-MEMS resonator platforms targeted for inherent integration of MEMS and circuitry towards single-chip implementation for timing reference...
Integrated complementary metal-oxide-semiconductor (CMOS)-microelectro mechanical systems (MEMS) beam-array resonators that take advantage of the pull-in effect to surmount limitations of standard CMOS foundry processes have been demonstrated to attain electrode-to-resonator gap spacing at a deep-submicrometer range. Such deep-submicrometer gaps lead to much larger electromechanical coupling coefficient...
An integrated CMOS-MEMS transverse-mode square plate resonator centered at 6.52 MHz has been demonstrated with Q's ranging from 800 to 1,900, and specifically with the lowest motional impedance of 35 kΩ compared to any other CMOS-MEMS counterparts to date by the combination of large transduction area and pull-in mechanism to achieve deep-submicron electrode-to-resonator gap spacing using a foundry-oriented...
Integrated CMOS-MEMS array resonators have been demonstrated that takes advantage of pull-in effect to surmount limitations of CMOS foundry process and attains electrode-to-resonator gap spacing at a deep-submicron range, leading to much smaller motional impedance compared to conventional CMOS-MEMS technologies, while possessing unique frequency tuning capability by modulating their mechanical boundary...
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