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Integrated CMOS-MEMS free-free beam resonators using pull-in mechanism to surmount the limitation of CMOS minimum feature size and hence achieve deep-submicron electro-to-resonator gap spacing have been demonstrated to overcome Q-degradation and frequency variation caused by modulated boundary conditions, greatly improving resonator Q and at the same time reducing motional impedance to allow direct...
A micromechanical displacement amplifier comprising two asymmetric resonator array composites coupled by a quarter-wavelength beam has been demonstrated that permits specification of gain factor by mere (digital) selection of an appropriate ratio of the number of resonators in an input array to that in an output array. Like the method, this displacement gain circuit is a key enabler for resoswitch-based...
Vibrating polysilicon micromechanical ring resonators, using a unique extensional wine-glass-mode shape to achieve lower impedance than previous UHF resonators, have been demonstrated at frequencies as high as 1.2 GHz with a Q of 3,700, and 1.52 GHz with a Q of 2,800. The 1.2-GHz resonator exhibits a measured motional resistance of 1 MOmega with a dc-bias voltage of 20 V, which is 2.2 times lower...
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