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Two types of transient leakages in gate oxide due to charge traps and phosphorus contaminants induced during gate oxidation processing have been extensively examined. The reliability of gate oxide grown from a corroded silicon surface was degraded by the existence of charge traps locally on the pitted spots, resulting in irregularly transient leakages and early breakdowns. The regular transiency of...
The yield-oriented monitor and reliability-specific monitor can provide complementary merits for high-quality wafer-manufacturing. In this paper, two case studies were provided respectively, and our insightful data reviews promptly identified, without any DOEs (Design of Experiments) along the production lines, the source of defects and failure mechanism involved. An interactive utilization of both...
The yield-oriented monitor and reliability-specific monitor can provide complementary merits for high-quality wafer-manufacturing. In this paper, two case studies were provided respectively, and our insightful data reviews promptly identified, without any DOEs (Design of Experiments) along the production lines, the source of defects and failure mechanism involved. An interactive utilization of both...
The transient leakage specifically within pMOS gate oxide has been for the first time connected to excessive phosphorus contaminants as a constant source of defects at gate oxidation. A 3D spatial analysis of defect transportation and formation was critical to the first-time success in design of experiment. By avoiding a significant build-up of phosphorus-contaminants inside the gate oxidation furnace,...
The various observations of poly-silicon (poly-Si) crater-defects and their impacts on the gate oxide integrity (GOI) in a dual-gate technology were first described. The electrochemical kinetics of selectively corroding poly-silicon has been elucidated for the first time in generating lonely crater-defects into the unnoticeable spots of damage due to the intermittent micro-arcing events during implantation...
This paper proposes and verifies a new concept, “oxide layer slicing”, for electrically locating gate oxide defects within highly integrated dual-gate technologies. The discrepancy of defectivity between thin and thick gate oxides provides a quick and unique insight of the physical location and even the distribution of the defects, thus significantly relieving the efforts of searching a defective...
The roughness of "bird's-beak" frontline prior to gate oxidation has been revealed for the first time to degrade gate oxide reliability in TDDB. This new mechanism identifies the "extrinsic" Qbd responses to electrical fields. The restorations of intrinsic Qbd have been realized by post-fabrication anneals or process improvement.
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