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We have developed light irradiation and applied voltage history sensors using amorphous In-Ga-Zn-O (oc-IGZO) thin-film transistor (TFTs) exposed to ozone annealing and fabricated under high oxygen pressure. These a-IGZO TFTs have an interesting property; the Ids-Vgs characteristic shifts positively and becomes steep when gate voltage is applied whereas it recover the initial one with a small threshold...
We propose a light irradiation history sensor using an amorphous In-Ga-Zn-O (α-IGZO) thin-film transistor (TFT) fabricated by high oxygen partial pressure sputtering. The α-IGZO TFT has an interesting property. The Ids-Vgs characteristic shifts positively, and the subthreshold slope becomes steep when the gate bias is applied, whereas the Ids-Vgs characteristic shifts negatively and the subthreshold...
We propose a light irradiation history sensor using an amorphous In-Ga-Zn-O ( -IGZO) thin-film transistor (TFT) exposed to ozone annealing at 300 . The -IGZO TFT has an interesting property. The Ids-Vgs characteristic shifts positively, and the subthreshold slope becomes steep when the gate bias is applied, whereas the Ids-Vgs characteristic shifts negatively and the subthreshold...
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