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A wide band high gain unidirectional antenna is presented in this paper. The antenna mainly contains three substrates. A wide band monopole is printed on the middle substrate as the driven element. By printing a circular and a ring patch on the other two substrates respectively, a multi-resonate frequency is introduced and the band width is widened markedly. What's more, a fractal slot structure is...
THz technology offers multiple applications in areas such as remote sensing, spectroscopy, biomedical imaging, and ultra-wide bandwidth communications [1]. However, obtaining high-frequency performance at THz frequencies has proven challenging in conventional electronic devices. This difficulty motivated the exploration of unconventional transport mechanisms such as electron plasma waves. Two dimensional...
GaN vertical power transistors have gained increasing interest in recent years due to the advantages over lateral transistors in high voltage/high current applications. To date, two major topologies have been studied most: gate-on-epi-surface (GoE) and gate-on-sidewall (GoS). The GoE devices include CAVET [1] and VDMOSFET-like transistors [2, 3]. The GoS devices include U-MOS or trench-MOSFETs with...
GaN vertical power devices have many advantage over lateral device in device scaling, reliability and thermal management, etc. Traditional power transistors employ p-type pockets to achieve E-mode, RESURF and avalanche capabilities. However, this topology in GaN vertical power transistors has been challenging to implement [1] due to the difficulty to achieve selective area doping without compromising...
This research presents a new methodology of developing the brain stroke localization algorithm by using the machine-learning based pattern recognition approach for foreign object classification. Due to the new algorithm requires less bandwidth from the system hardware level, the proposed method would be helpful to reduce the challenges of designing a high-performance UWB antenna array required from...
GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
Owing to the large bandgap, breakdown electric field (Eb) and high carrier mobility, wide-bandgap semiconductor (e.g. SiC and GaN) based power devices have been extensively studied for next-generation power-switching applications [1-2]. Recently, a new wide-bandgap oxide semiconductor, gallium oxide (β-Ga2O3), has attracted attention for power-switching applications because it has an extremely large...
The III-nitride wide bandgap semiconductors show attractive and compelling potential for power electronics due to their high breakdown electric field (Ebr) as well as high carrier mobilities (μ). Previous efforts have realized GaN high power p-n diodes by traditional acceptor-donor doping.[2–4] The new polarization-induced doping technique using graded AlGaN heterostructures can improve the doping...
Owing to the large breakdown electric field (Eb), wide bandgap semiconductors (WBGs) such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the area specific-on resistance (Ron,sp) and breakdown voltage (BV) is often employed to compare the performance limitation among various materials. The...
A 2D analytical model for breakdown voltage (BV) and specific on-resistance (Ron, sp) of GaN lateral polarization-doped super-junction (LPSJ) devices has been developed. The electric field along the critical path has been modeled and compared with 2D simulation results, followed by breakdown voltage calculation using impact ionization integral. Design space and optimization of LPSJ has been disused...
Wide bandgap semiconductors (WBG) offer the most compelling solutions for power electronics owing to their large breakdown electric field (Eb) and high carrier mobilities. The Baliga's figure of merit (εμEb3) of WBGs including GaN and SiC is ∼100X higher than that of Si. On the other hand, super junction (SJ) diodes can break the limitation of the trade-off relationship between area specific-on resistance...
AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing (SS) < 60mV/dec over 6 orders of drain current swing over a wide range of drain biases from 0.1 to 10V at room temperature are demonstrated. A low SS of 33 mV/dec has been observed at a drain bias of 10V when Vgs is sweept ‘up’, from low to high values. The origin for such steep SS has been ascribed to the dynamic de-trapping and charge...
In this work we provide a new outlook on plasmonic effects in periodically patterned semiconductor ribbons. Based on the classical electromagnetic theory we develop an analytical model to represent these effects and show that: 1. THz plasmons can be excited at room temperature in periodically patterned semiconductor 2DEGs (regardless of the semiconductor material); 2. its strength and frequency dependence...
We propose and demonstrate a graphene-based device achieving extraordinary control of terahertz (THz) wave reflectance. The advantages of graphene based switchable THz devices include low cost, facile fabrication and excellent tunability, thus promising for THz system applications.
In this paper, the effects of oxide charges at different locations on on-state and off-state performance of SOI LDMOS devices are investigated through simulation. According to the results, the channel end region and channel side of STI have great effect on device on-state performance while the drain side of STI greatly affect off-state performance.
A novel SOI LDMOS (Lateral Double Diffused MOSfet) structure substituting the PN junction between channel region and drift region with PIN junction is presented in this paper. On-state and off-state characteristics of this device are investigated by two dimensional simulation using Dessis. This novel device has higher breakdown voltage with the same drift length compared to conventional device. The...
This paper presents on-state characteristics of two types of UTB FD MOSFETs simulated by Monte Carlo method. The two devices under investigation have elevated and recessed source/drain respectively. The comparison of non-stationary transports effect is made between the two devices. Different non-stationary transports effect in the two devices is the cause of different on state characteristics. Transit...
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