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High-voltage vertical regrown p-n junction diodes on bulk GaN substrates are reported in this letter with molecular-beam-epitaxy regrown p-GaN on metalorganic-chemical-vapor-deposition grown n-GaN drift region. The highest breakdown voltage is measured at 1135 V, and the differential on-resistance is 3.9 mOhm.cm2 at room temperature. The forward I–V show a turn-ON voltage near 3.9 V and an ideality...
A 2D analytical model for breakdown voltage (BV) and specific on-resistance (Ron, sp) of GaN lateral polarization-doped super-junction (LPSJ) devices has been developed. The electric field along the critical path has been modeled and compared with 2D simulation results, followed by breakdown voltage calculation using impact ionization integral. Design space and optimization of LPSJ has been disused...
A novel SOI LDMOS (Lateral Double Diffused MOSfet) structure substituting the PN junction between channel region and drift region with PIN junction is presented in this paper. On-state and off-state characteristics of this device are investigated by two dimensional simulation using Dessis. This novel device has higher breakdown voltage with the same drift length compared to conventional device. The...
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