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This work reviews a process that was developed to enhance the interface state density of a Ge/High-k interface. A slot plane antenna plasma oxidation (SPAO) process was implemented during dielectric deposition steps to fabricate TiN/ZrO2/Al2O3/p-Ge MOS gate stacks. A poor interface was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition because of fragmented GeOX interfacial...
In this study, we have employed e-beam evaporation technique to evaluate the effect of O2 flow rate during evaporation on HfO2 films grown on Silicon substrates. We report the influence of oxygen flow rate on 32–40nm HfO2 films, by characterizing the chemical and electrical properties. It has been demonstrated that the films deposited at 3 SCCM O2 flow rate show better compositional and electrical...
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