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The paper considers the problem of the influence of technological fluctuation of the power MOSFET electrical and thermal parameters values on the operation thermal mode. The transistor model is described. The results of the simulation of the electrothermal processes occurring in the electronic switch circuit with a resistive load are presented. Dependences of the die temperature from the thermal resistance...
The article discusses the method of selection of power semiconductor devices for formation of group serial circuits of power electronics devices. It is proposed to carry out the selection on a set of parameters, using the developed hardware and software complex. The results of calculating values of capacitance capacitor of snubber circuit are present for group connection.
The article deals with a program for modeling the transient off of power semiconductor devices, which allows to take into account the parameters of a semiconductor structure of power semiconductor devices and circuitry.
The article considers the program module for power MOSFETs selection by electrical and thermal parameters for device group connection. Submitted program interface. Proposed a new approach to the creation of MOSFET electrothermal model. Describes process of modeling.
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