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We report on measuring radiation effects of energetic oxygen ions on silicon carbide (SiC) diaphragm resonators. Micromachined SiC diaphragms (1 mm × 1 mm × 2μm) vibrating at ∼200–800 kHz on multimode resonances are exposed to 14.3 MeV oxygen ions to sensitively probe the radiation effects of high-energy ions. We have observed frequency redshifts as large as ∼2.6%, as well as quality (Q) factor degradation...
NPN and PNP bipolar junction transistors of varying sizes are irradiated with 4-MeV protons and 10-keV X-rays to determine the amount of ionization-related degradation caused by protons and calculate an improved estimate of displacement-related degradation due to protons. While different ratios of degradation produced by displacement damage and ionization effects will occur for different device technologies,...
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