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GaN-FETs are attractive switching devices for their fast switching capability. However, they often suffer from the oscillatory false triggering, i.e. a series of self-sustaining repetitive false triggering induced after a fast switching. The purpose of this paper is to derive a design instruction to prevent this phenomenon. According to the previous study, the oscillatory false triggering was found...
SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high...
This paper describes mid-range electrical resonance wireless power transfer in kHz range. Wireless power transfer using electrical field is minor since this method is understood only for close-range applications. However, our experimental units, the resonance frequency of which is 85 kHz, achieved 180 mm distance power transmission by vector network analyzer (VNA) measurement while keeping peak efficiency...
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