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Embedded flash memories having high-k metal gate-based logic devices will require modifications to the flash cells in order to remain economically feasible. One potential integration scheme is to keep the traditional ONO layer as the flash cell's inter-gate dielectric and replace its poly-Si control gate with the same high-k metal gate stack used for the logic devices. Preliminary electrical tests...
The silicon dioxide/silicon nitride/silicon dioxide (ONO) inter-gate dielectric layer has long been used in floating gate flash memories to provide coupling with the control gate, while simultaneously blocking leakage to it. Given the thickness and quality of the ONO, it is not possible to directly measure the leakage currents at low electric fields. This article presents the Oxide Stress Separation...
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