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The feasibility of a 1.2kV GaN switch based on two series-connected 650V GaN transistors is demonstrated in this paper. Aside to achieve ultra-fast transitions and reduced switching energy loss, stacking GaN transistors enables compatibility with high-voltage GaN-on-Silicon technologies. A proof-of-concept is provided by electrical characterization and hard-switching operation of a GaN Super-Cascode...
A new analytical model is presented in this study to predict power losses and waveforms of high-voltage silicon superjunction MOSFET during hard-switching operation. This model depends on datasheet parameters of the semiconductors, as well as the parasitics obtained from the printed circuit board characterization. It is important to note that it also includes original features accounting for strong...
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