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To identify the individually optimized thermal annealing conditions for reducing the contact resistivity between highly Ga-doped ZnO (GaZnO) and doped-GaN and for improving the electrical and optical properties of GaZnO, the results of the one-step and two-step growth/annealing processes of GaZnO at various growth and thermal annealing temperatures are compared. The one-step (two-step) process corresponds...
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