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A wideband GaN Doherty power amplifier (DPA) for 4G/LTE-Advanced base stations is presented. To break the inherent narrow band limitation of conventional DPA, a frequency dependency compensating circuit and a modified λ/4 inverter incorporating package parasitic elements are proposed. Measured DPA achieves 45.9–50.2 % drain efficiency with −50 dBc ACLR at 3.0–3.6 GHz under 20 MHz LTE signal after...
This paper presents a high-power, high-efficiency GaN HEMT Doherty power amplifier (DPA) for 3.5-GHz-band LTE macro-cell base-stations. To enhance the efficiency of the DPA, a new input matching circuit design based on a normalized peak amplifier's power ratio is proposed. A symmetrical DPA with the circuit is designed using 64.6% drain efficiency, 200W GaN HEMTs. The design shows significant improvement...
This paper describes a high efficiency and high output power GaN power amplifier for C-band space applications. The amplifier uses on-chip harmonic tuned FETs to improve dc-to-rf conversion efficiency. A 2nd harmonic input tuning circuit is incorporated into each unit on-chip FET cell and realizes high precise control of 2nd harmonic input impedance. In addition, 2nd and 3rd harmonic output impedances...
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