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This paper presents a 0.325-THz single-ended amplifier designed in a 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and utilizes staggered-tuning along with inductive feedback (drain to gate) technique to boost up the gain over a wide frequency band. Having a total power consumption of 28 mW, the amplifier achieves a peak gain of 4.5 dB at 325 GHz. To the best...
This paper presents the design and measurement results of a W-band two-stage differential amplifier using transformers in 28-nm CMOS FDSOI. At 90 GHz, the amplifier achieves 13.8 dB gain, and the input and output return loss are −8.0 dB and −11 dB, repectively. The amplifier obtains +5 dBm saturated output power and 1-dB output compression point of 0 dBm at the centre frequency. From 85 to 95 GHz,...
This paper presents a 124 to 184 GHz single-ended amplifier designed in 28-nm FDSOI CMOS technology. The amplifier consists of four common-source gain stages and broadband matching networks for input, output and inter-stage matching employing slow-wave shielded co-planar waveguides. Having a total power consumption of 31 mW, the amplifier achieves a peak gain of 10.1 dB at 167 GHz and a 3-dB bandwidth...
This paper presents a 100-GHz vector-sum differential phase shifter in 28-nm CMOS FDSOI. Gilbert-cell type active switches are used to generate 0° and 180° out of phase signals and a 90° hybrid for obtaining I-Q signals. The hybrid is a compact capacitive loaded slow-wave differential branch-line coupler which is 75% smaller than a conventional 90° hybrid. The design has an area of 0.565 mm2 including...
A compact 129–140 GHz Gilbert-cell mixer for up-conversion and 127–140 GHz image-rejection (IR) resistive mixer for down-conversion are realized for a 140-GHz transceiver in 28 nm bulk CMOS technology. A wide 7.5-GHz intermediate frequency (IF) tuning range is obtained for both mixers. The measurement results show a 6 to 12 dB conversion loss for the Gilbert-cell mixer with a layout size of 0.455mm2...
This paper presents the design and corresponding measurement results of a W-Band differential I-Q phase shifter in 28-nm CMOS technology. Design of CMOS active switches and passive components like a 90° hybrid realized for differential I-Q operation are shown. The phase of the RF signal can be varied from 0° to 270° in steps of 90°. The measured input and output matching are better than −10 dB, and...
This paper presents the design of a W-Band I-Q phase shifter and the corresponding simulation results in 28-nm CMOS technology. The design of passive components like a 90° hybrid and transformers needed to realize differential I-Q operation is shown. The phase of the RF signal can be varied from 0° to 270° in steps of 90°. The simulated input and output matching are better than −10 dB, and the maximum...
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